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DMG3N60SJ3

Part No DMG3N60SJ3
Manufacturer Diodes Incorporated
Description MOSFET BVDSS: 501V 650V TO251
Lead Free Status / RoHS Status Lead Free /RoHS non-compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):650V
Power Dissipation (Max):41W (Tc)
Package / Case:TO-251-3, IPak, Short Leads
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:TO-251
Vgs(th) (Max) @ Id:4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Contains lead / RoHS Compliant
Detailed Description:N-Channel 650V 2.8A (Tc) 41W (Tc) Through Hole TO-251
FET Feature:-
Manufacturer Standard Lead Time:22 Weeks
Email:info@chipdigger.com
FET Type:N-Channel
Series:Automotive, AEC-Q101
Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:354pF @ 25V
Vgs (Max):±30V
Rds On (Max) @ Id, Vgs:3.5 Ohm @ 1.5A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:12.6nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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