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IPD10N03LA G

Part No IPD10N03LA G
Manufacturer Infineon Technologies
Description MOSFET N-CH 25V 30A TO252-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id1358 pF @ 15 V
Vgs(th)(Max)@Id52W (Tc)
Vgs-
FETFeaturePG-TO252-3-11
DraintoSourceVoltage(Vdss)25 V
OperatingTemperature4.5V, 10V
DriveVoltage(MaxRdsOn10.4mOhm @ 30A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType±20V
InputCapacitance(Ciss)(Max)@VdsSurface Mount
SeriesOptiMOS™
Qualification
SupplierDevicePackage11 nC @ 5 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C30A (Tc)
Vgs(Max)-55°C ~ 175°C (TJ)
MinRdsOn)2V @ 20µA
PackageTape & Reel (TR)
PowerDissipation(Max)TO-252-3, DPak (2 Leads + Tab), SC-63

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