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IPD12CNE8N G

Part No IPD12CNE8N G
Manufacturer Infineon Technologies
Description MOSFET N-CH 85V 67A TO252-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id4V @ 83µA
Vgs(th)(Max)@Id±20V
Vgs64 nC @ 10 V
FETFeature125W (Tc)
DraintoSourceVoltage(Vdss)85 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypePG-TO252-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C67A (Tc)
Vgs(Max)4340 pF @ 40 V
MinRdsOn)12.4mOhm @ 67A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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