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IPD13N03LA G

Part No IPD13N03LA G
Manufacturer Infineon Technologies
Description MOSFET N-CH 25V 30A TO252-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id2V @ 20µA
Vgs(th)(Max)@Id±20V
Vgs8.3 nC @ 5 V
FETFeature46W (Tc)
DraintoSourceVoltage(Vdss)25 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypePG-TO252-3-11
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C30A (Tc)
Vgs(Max)1043 pF @ 15 V
MinRdsOn)12.8mOhm @ 30A, 10V
PackageTape & Reel (TR),Cut Tape (CT)
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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