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IPP12CNE8N G

Part No IPP12CNE8N G
Manufacturer Infineon Technologies
Description MOSFET N-CH 85V 67A TO220-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id4340 pF @ 40 V
Vgs(th)(Max)@Id125W (Tc)
Vgs-
FETFeaturePG-TO220-3
DraintoSourceVoltage(Vdss)85 V
OperatingTemperature10V
DriveVoltage(MaxRdsOn12.9mOhm @ 67A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType±20V
InputCapacitance(Ciss)(Max)@VdsThrough Hole
SeriesOptiMOS™
Qualification
SupplierDevicePackage64 nC @ 10 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C67A (Tc)
Vgs(Max)-55°C ~ 175°C (TJ)
MinRdsOn)4V @ 83µA
PackageTube
PowerDissipation(Max)TO-220-3

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