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NTGD1100LT1G

Part No NTGD1100LT1G
Manufacturer ON Semiconductor
Description MOSFET N/P-CH 8V 3.3A 6-TSOP
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Transistor ApplicationSWITCHING
Surface MountYES
Radiation HardeningNo
Drain to Source Voltage (Vdss)8V
Drain to Source Resistance80mOhm
Element ConfigurationDual
Package / CaseSOT-23-6 Thin, TSOT-23-6
Lifecycle StatusACTIVE (Last Updated: 4 days ago)
Terminal FormGULL WING
Number of Pins6
Operating ModeENHANCEMENT MODE
Number of Elements2
Max Power Dissipation830mW
Moisture Sensitivity Level (MSL)1 (Unlimited)
Operating Temperature-55°C~150°C TJ
Voltage - Load1.8V~8V
Mounting TypeSurface Mount
Pin Count6
Resistance40MOhm
Power Dissipation830mW
PackagingTape & Reel (TR)
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Transistor Element MaterialSILICON
Output TypeP-Channel
Output ConfigurationHigh Side
Terminal FinishTin (Sn)
Number of Terminations6
Height1mm
ECCN CodeEAR99
Width1.7mm
Lead FreeLead Free
Pbfree Codeyes
RoHS StatusROHS3 Compliant
Drain to Source Breakdown Voltage8V
Gate to Source Voltage (Vgs)8V
Current Rating3.3A
Switch TypeGeneral Purpose
Ratio - Input:Output1:1
Rds On (Typ)40m Ω
JESD-609 Codee3
Factory Lead Time2 Weeks
Number of Outputs1
Time@Peak Reflow Temperature-Max (s)40
Peak Reflow Temperature (Cel)260
Continuous Drain Current (ID)3.3A
TypeGeneral Purpose
Length3.1mm
SubcategoryOther Transistors
Part StatusActive
Published2001
InterfaceOn/Off
Base Part NumberNTGD1100L
Voltage - Rated DC20V

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