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SI7160DP-T1-E3

Part No SI7160DP-T1-E3
Manufacturer Vishay
Description MOSFET N-CH 30V 20A PPAK SO-8
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):30V
Power Dissipation (Max):5W (Ta), 27.7W (Tc)
Package / Case:PowerPAK® SO-8
Mounting Type:Surface Mount
Packaging:Tape & Reel (TR)
Supplier Device Package:PowerPAK® SO-8
Vgs(th) (Max) @ Id:2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 30V 20A (Tc) 5W (Ta), 27.7W (Tc) Surface Mount PowerPAK® SO-8
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@chipdigger.com
FET Type:N-Channel
Series:TrenchFET®
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds:2970pF @ 15V
Vgs (Max):±16V
Rds On (Max) @ Id, Vgs:8.7 mOhm @ 15A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:66nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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