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EPC2010

Part No EPC2010
Manufacturer EPC
Description GANFET N-CH 200V 12A DIE
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

RdsOn(Max)@Id2.5V @ 3mA
Vgs(th)(Max)@Id+6V, -4V
Vgs7.5 nC @ 5 V
FETFeature-
DraintoSourceVoltage(Vdss)200 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn5V
ProductStatusDiscontinued at Digi-Key
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypeDie
InputCapacitance(Ciss)(Max)@Vds-
SerieseGaN®
Qualification
SupplierDevicePackageDie
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Current-ContinuousDrain(Id)@25°C12A (Ta)
Vgs(Max)540 pF @ 100 V
MinRdsOn)25mOhm @ 6A, 5V
PackageTape & Reel (TR)
PowerDissipation(Max)-40°C ~ 125°C (TJ)

Introduce

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