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IPC218N04N3X1SA1

Part No IPC218N04N3X1SA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 40V 2A SAWN ON FOIL
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):40V
Power Dissipation (Max):-
Package / Case:Die
Mounting Type:Surface Mount
Supplier Device Package:Sawn on foil
Vgs(th) (Max) @ Id:4V @ 200µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 40V 2A (Tj) Surface Mount Sawn on foil
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@chipdigger.com
FET Type:N-Channel
Series:OptiMOS™
Current - Continuous Drain (Id) @ 25°C:2A (Tj)
Other Names:SP000448986
Vgs (Max):-
Rds On (Max) @ Id, Vgs:50 mOhm @ 2A, 10V
Technology:MOSFET (Metal Oxide)
Operating Temperature:-

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