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IPI80N04S2H4AKSA2

Part No IPI80N04S2H4AKSA2
Manufacturer Infineon Technologies
Description MOSFET N-CH 40V 80A TO262-3
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):40V
Power Dissipation (Max):300W (Tc)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:PG-TO262-3-1
Vgs(th) (Max) @ Id:4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 40V 80A (Tc) 300W (Tc) Through Hole PG-TO262-3-1
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@chipdigger.com
FET Type:N-Channel
Series:OptiMOS™
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Other Names:SP001061290
Input Capacitance (Ciss) (Max) @ Vds:4400pF @ 25V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:3.7 mOhm @ 80A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:148nC @ 10V
Operating Temperature:-55°C ~ 175°C (TJ)

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