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SPP11N60S5

Part No SPP11N60S5
Manufacturer Infineon
Description Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Data sheet

Min Operating Temperature-55 °C
Fall Time20 ns
RoHSCompliant
Drain to Source Voltage (Vdss)650 V
Drain to Source Resistance380 mΩ
Element ConfigurationSingle
Number of Pins3
Height4.4 mm
Input Capacitance1.46 nF
Width10.26 mm
Lead FreeContains Lead
Rds On Max380 mΩ
Max Power Dissipation125 W
Drain to Source Breakdown Voltage600 V
Gate to Source Voltage (Vgs)20 V
Current Rating11 A
Turn-On Delay Time130 ns
Max Operating Temperature150 °C
Power Dissipation125 W
Continuous Drain Current (ID)11 A
Rise Time35 ns
Length8.64 mm
Turn-Off Delay Time150 ns
Contact PlatingTin
Voltage Rating (DC)650 V
Case/PackageTO-220-3

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