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BSP123E6327T

Part No BSP123E6327T
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 370MA SOT223-4
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id1.8V @ 50µA
Vgs(th)(Max)@Id±20V
Vgs2.4 nC @ 10 V
FETFeature1.79W (Ta)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn2.8V, 10V
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-SOT223-4
InputCapacitance(Ciss)(Max)@Vds-
SeriesSIPMOS®
Qualification
SupplierDevicePackageTO-261-4, TO-261AA
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C370mA (Ta)
Vgs(Max)70 pF @ 25 V
MinRdsOn)6Ohm @ 370mA, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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