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FESB16JT-M3/I

Part No FESB16JT-M3/I
Manufacturer Vishay General Semiconductor - Diodes Division
Description DIODE GEN PURP 600V 16A TO263AB
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Data sheet

Current-ReverseLeakage@Vr145pF @ 4V, 1MHz
SpeedFast Recovery =< 500ns, > 200mA (Io)
FTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
ProductStatusActive
Package/Case-65°C ~ 150°C
Grade50 ns
Capacitance@VrSurface Mount
ReverseRecoveryTime(trr)10 µA @ 600 V
MountingTypeTO-263AB (D2PAK)
Series-
Qualification
SupplierDevicePackageAutomotive
Voltage-Forward(Vf)(Max)@If1.5 V @ 16 A
TechnologyStandard
Voltage-DCReverse(Vr)(Max)600 V
OperatingTemperature-JunctionAEC-Q101
Current-AverageRectified(Io)16A
PackageTape & Reel (TR)

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