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HUF75309D3ST

Part No HUF75309D3ST
Manufacturer Fairchild Semiconductor
Description Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Min Operating Temperature-55 °C
Drain to Source Breakdown Voltage55 V
Gate to Source Voltage (Vgs)20 V
MountSurface Mount
Current Rating19 A
Fall Time30 ns
RoHSCompliant
Max Operating Temperature175 °C
Drain to Source Voltage (Vdss)55 V
Power Dissipation55 W
Drain to Source Resistance70 mΩ
Continuous Drain Current (ID)19 A
Element ConfigurationSingle
Rise Time39 ns
Turn-Off Delay Time24 ns
Number of Elements1
Input Capacitance350 pF
Voltage Rating (DC)55 V
Lead FreeLead Free
Rds On Max70 mΩ
Case/PackageTO-252
Max Power Dissipation55 W

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