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IPD50N06S4L08ATMA1

Part No IPD50N06S4L08ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 60V 50A TO252-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id2.2V @ 35µA
Vgs(th)(Max)@Id±16V
Vgs64 nC @ 10 V
FETFeature71W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusDiscontinued at Digi-Key
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypePG-TO252-3-11
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C50A (Tc)
Vgs(Max)4780 pF @ 25 V
MinRdsOn)7.8mOhm @ 50A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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