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IPI126N10N3 G

Part No IPI126N10N3 G
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 58A TO262-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id3.5V @ 46µA
Vgs(th)(Max)@Id±20V
Vgs35 nC @ 10 V
FETFeature94W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn6V, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypePG-TO262-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C58A (Tc)
Vgs(Max)2500 pF @ 50 V
MinRdsOn)12.6mOhm @ 46A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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