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IRF610L

Part No IRF610L
Manufacturer Vishay Siliconix
Description MOSFET N-CH 200V 3.3A TO262
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Data sheet

RdsOn(Max)@Id8.2 nC @ 10 V
Vgs(th)(Max)@Id-
Vgs140 pF @ 25 V
FETFeatureThrough Hole
DraintoSourceVoltage(Vdss)200 V
OperatingTemperatureTO-262-3 Long Leads, I2PAK, TO-262AA
DriveVoltage(MaxRdsOn1.5Ohm @ 2A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType10V
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
Series-
Qualification
SupplierDevicePackage±20V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C3.3A (Tc)
Vgs(Max)3W (Ta), 36W (Tc)
MinRdsOn)4V @ 250µA
PackageTube
PowerDissipation(Max)TO-262

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