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IRF8113

Part No IRF8113
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 17.2A 8SO
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id2.2V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs36 nC @ 4.5 V
FETFeature2.5W (Ta)
DraintoSourceVoltage(Vdss)30 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType8-SO
InputCapacitance(Ciss)(Max)@Vds-
SeriesHEXFET®
Qualification
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C17.2A (Ta)
Vgs(Max)2910 pF @ 15 V
MinRdsOn)5.6mOhm @ 17.2A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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