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SI4102DY-T1-E3

Part No SI4102DY-T1-E3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 100V 3.8A 8SO
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Data sheet

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs11 nC @ 10 V
FETFeature2.4W (Ta), 4.8W (Tc)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn6V, 10V
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType8-SOIC
InputCapacitance(Ciss)(Max)@Vds-
SeriesTrenchFET®
Qualification
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C3.8A (Tc)
Vgs(Max)370 pF @ 50 V
MinRdsOn)158mOhm @ 2.7A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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