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SI8900EDB-T2-E1

Part No SI8900EDB-T2-E1
Manufacturer Vishay Siliconix
Description MOSFET 2N-CH 20V 5.4A 10-MFP
Lead Free Status / RoHS Status Contains lead / RoHS compliant
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Specifications

Data sheet

RdsOn(Max)@Id-
Vgs(th)(Max)@Id-
Vgs1V @ 1.1mA
Configuration2 N-Channel (Dual) Common Drain
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
OperatingTemperatureSurface Mount
ProductStatusActive
Package/Case10-Micro Foot™ CSP (2x5)
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType10-UFBGA, CSPBGA
InputCapacitance(Ciss)(Max)@Vds1W
SeriesTrenchFET®
Qualification
SupplierDevicePackage
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C5.4A
PackageTape & Reel (TR)
Power-Max-55°C ~ 150°C (TJ)

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