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TP65H070LDG

Part No TP65H070LDG
Manufacturer Transphorm
Description GANFET N-CH 650V 25A 3PQFN
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id4.8V @ 700µA
Vgs(th)(Max)@Id±20V
Vgs9.3 nC @ 10 V
FETFeature96W (Tc)
DraintoSourceVoltage(Vdss)650 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusDiscontinued at Digi-Key
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType3-PQFN (8x8)
InputCapacitance(Ciss)(Max)@Vds-
SeriesTP65H070L
Qualification
SupplierDevicePackage3-PowerDFN
FETTypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
Current-ContinuousDrain(Id)@25°C25A (Tc)
Vgs(Max)600 pF @ 400 V
MinRdsOn)85mOhm @ 16A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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