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IPB80N03S4L03ATMA1

Part No IPB80N03S4L03ATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 80A TO263-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id75 nC @ 10 V
Vgs(th)(Max)@Id-
Vgs5100 pF @ 25 V
FETFeatureSurface Mount
DraintoSourceVoltage(Vdss)30 V
OperatingTemperatureTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DriveVoltage(MaxRdsOn3.3mOhm @ 80A, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType4.5V, 10V
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
SeriesOptiMOS™
Qualification
SupplierDevicePackage±16V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C80A (Tc)
Vgs(Max)94W (Tc)
MinRdsOn)2.2V @ 45µA
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)PG-TO263-3-2

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