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IPB80N06S207ATMA4

Part No IPB80N06S207ATMA4
Manufacturer Infineon Technologies
Description MOSFET N-CH 55V 80A TO263-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id4V @ 180µA
Vgs(th)(Max)@Id-
Vgs±20V
FETFeatureSurface Mount
DraintoSourceVoltage(Vdss)55 V
OperatingTemperatureTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingType110 nC @ 10 V
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
SeriesOptiMOS™
Qualification
SupplierDevicePackage3400 pF @ 25 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C80A (Tc)
Vgs(Max)250W (Tc)
MinRdsOn)6.3mOhm @ 68A, 10V
PackageTape & Reel (TR)
PowerDissipation(Max)PG-TO263-3-2

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