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IPD600N25N3GBTMA1

Part No IPD600N25N3GBTMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 250V 25A TO252-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id4V @ 90µA
Vgs(th)(Max)@Id±20V
Vgs29 nC @ 10 V
FETFeature136W (Tc)
DraintoSourceVoltage(Vdss)250 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypePG-TO252-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesOptiMOS™
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C25A (Tc)
Vgs(Max)2350 pF @ 100 V
MinRdsOn)60mOhm @ 25A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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