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IPD60R1K0CEATMA1

Part No IPD60R1K0CEATMA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 600V 4.3A TO252-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id3.5V @ 130µA
Vgs(th)(Max)@Id±20V
Vgs13 nC @ 10 V
FETFeature37W (Tc)
DraintoSourceVoltage(Vdss)600 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
MountingTypePG-TO252-3
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolMOS™ CE
Qualification
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C4.3A (Tc)
Vgs(Max)280 pF @ 100 V
MinRdsOn)1Ohm @ 1.5A, 10V
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max)-40°C ~ 150°C (TJ)

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