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IRF1010EL

Part No IRF1010EL
Manufacturer Infineon Technologies
Description MOSFET N-CH 60V 84A TO262
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id4V @ 250µA
Vgs(th)(Max)@Id±20V
Vgs130 nC @ 10 V
FETFeature200W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypeTO-262
InputCapacitance(Ciss)(Max)@Vds-
SeriesHEXFET®
Qualification
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C84A (Tc)
Vgs(Max)3210 pF @ 25 V
MinRdsOn)12mOhm @ 50A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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