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IRF1010EZS

Part No IRF1010EZS
Manufacturer Infineon Technologies
Description MOSFET N-CH 60V 75A D2PAK
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id4V @ 100µA
Vgs(th)(Max)@Id±20V
Vgs86 nC @ 10 V
FETFeature140W (Tc)
DraintoSourceVoltage(Vdss)60 V
OperatingTemperatureSurface Mount
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypeD2PAK
InputCapacitance(Ciss)(Max)@Vds-
SeriesHEXFET®
Qualification
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C75A (Tc)
Vgs(Max)2810 pF @ 25 V
MinRdsOn)8.5mOhm @ 51A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 175°C (TJ)

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