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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SPI11N60C3HKSA1
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SPI11N60C3HKSA1

Part No SPI11N60C3HKSA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 600V 11A TO-262
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Drain to Source Voltage (Vdss):600V
Power Dissipation (Max):125W (Tc)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type:Through Hole
Packaging:Tube
Supplier Device Package:PG-TO262-3-1
Vgs(th) (Max) @ Id:3.9V @ 500µA
Drive Voltage (Max Rds On, Min Rds On):10V
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:N-Channel 600V 11A (Tc) 125W (Tc) Through Hole PG-TO262-3-1
FET Feature:-
Moisture Sensitivity Level (MSL):1 (Unlimited)
Email:info@chipdigger.com
FET Type:N-Channel
Series:CoolMOS™
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Other Names:SP000013522
Input Capacitance (Ciss) (Max) @ Vds:1200pF @ 25V
Vgs (Max):±20V
Rds On (Max) @ Id, Vgs:380 mOhm @ 7A, 10V
Technology:MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:60nC @ 10V
Operating Temperature:-55°C ~ 150°C (TJ)

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