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SPI11N60CFD

Part No SPI11N60CFD
Manufacturer Infineon
Description Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, 3 PIN
Lead Free Status / RoHS Status Lead Free / RoHS compliant
Availability:8836 pcs
Quantity Unit Price Ext. Price
1+ $1.23 $123
10+ $1.2054 $603
100+ $1.1685 $1169
1000+ $1.1316 $1132
10000+ $1.0824 $1082
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Specifications

Data sheet

Min Operating Temperature-55 °C
Drain to Source Breakdown Voltage600 V
Nominal Vgs4 V
Gate to Source Voltage (Vgs)20 V
Fall Time7 ns
RoHSCompliant
Radiation HardeningNo
Max Operating Temperature150 °C
Drain to Source Voltage (Vdss)650 V
Power Dissipation125 W
Drain to Source Resistance440 mΩ
Continuous Drain Current (ID)11 A
Element ConfigurationSingle
Rise Time18 ns
Turn-Off Delay Time43 ns
Number of Pins3
Number of Elements1
Input Capacitance1.2 nF
Lead FreeLead Free
Rds On Max440 mΩ
Case/PackageTO-262-3
Max Power Dissipation125 W

Introduce

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