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SPI11N60CFDHKSA1

Part No SPI11N60CFDHKSA1
Manufacturer Infineon Technologies
Description MOSFET N-CH 650V 11A TO262-3
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id5V @ 500µA
Vgs(th)(Max)@Id±20V
Vgs64 nC @ 10 V
FETFeature125W (Tc)
DraintoSourceVoltage(Vdss)650 V
OperatingTemperatureThrough Hole
DriveVoltage(MaxRdsOn10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypePG-TO262-3-1
InputCapacitance(Ciss)(Max)@Vds-
SeriesCoolMOS™
Qualification
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C11A (Tc)
Vgs(Max)1200 pF @ 25 V
MinRdsOn)440mOhm @ 7A, 10V
PackageTube
PowerDissipation(Max)-55°C ~ 150°C (TJ)

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