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BSP295H6327

Part No BSP295H6327
Manufacturer Infineon Technologies
Description Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Availability:22855 pcs
Quantity Unit Price Ext. Price
1+ $0.5692 $57
10+ $0.5578 $279
100+ $0.5407 $541
1000+ $0.5237 $524
10000+ $0.5009 $501
The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Specifications

Data sheet

Continuous Drain Current (Id)1.8A
TypeNu6c9fu9053
Drain Source Voltage (Vdss)60V
Power Dissipation (Pd)1.8W
Gate Threshold Voltage (Vgs(th)@Id)1.8V@400u03bcA
Drain Source On Resistance (RDS(on)@Vgs,Id)300mu03a9@10V,1.8A

Introduce

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