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BSP296E6327

Part No BSP296E6327
Manufacturer Infineon Technologies
Description MOSFET N-CH 100V 1.1A SOT223-4
Lead Free Status / RoHS Status Contains lead /RoHS non-compliant
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Specifications

Data sheet

RdsOn(Max)@Id1.8V @ 400µA
Vgs(th)(Max)@Id364 pF @ 25 V
Vgs±20V
FETFeature-55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss)100 V
OperatingTemperaturePG-SOT223-4
DriveVoltage(MaxRdsOn4.5V, 10V
ProductStatusObsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingTypeTO-261-4, TO-261AA
InputCapacitance(Ciss)(Max)@Vds1.79W (Ta)
SeriesSIPMOS®
Qualification
SupplierDevicePackage17.2 nC @ 10 V
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C1.1A (Ta)
Vgs(Max)-
MinRdsOn)700mOhm @ 1.1A, 10V
PackageTape & Reel (TR),Cut Tape (CT)
PowerDissipation(Max)Surface Mount

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