Image |
Part Number |
Manufacturers |
Description |
View |
|
BSP20 |
ZETEX |
SOT-223 |
RFQ >>
|
|
BSP204 |
UTG |
SOT-223 |
RFQ >>
|
|
BSP204A |
PHILIPS |
SOT223 |
RFQ >>
|
|
BSP205 |
UTG |
SOT-223 |
RFQ >>
|
|
BSP206 |
UTG |
SOT-223 |
RFQ >>
|
|
BSP20AT1G |
onsemi |
SOT223 |
RFQ >>
|
|
BSP220 |
Nexperia |
- |
RFQ >>
|
|
BSP220,115 |
Nexperia USA Inc. |
MOSFET P-CH 200V 225MA SOT223 |
RFQ >>
|
|
BSP223 |
INFINEON |
SOT223 |
RFQ >>
|
|
BSP225 |
Nexperia |
- |
RFQ >>
|
|
BSP225,115 |
Nexperia USA Inc. |
MOSFET P-CH 250V 225MA SOT223 |
RFQ >>
|
|
BSP225/S911115 |
NXP USA Inc. |
P-CHANNEL MOSFET |
RFQ >>
|
|
BSP230 |
Nexperia |
- |
RFQ >>
|
|
BSP230,135 |
Nexperia USA Inc. |
MOSFET P-CH 300V 210MA SOT223 |
RFQ >>
|
|
BSP2314TV1.5 |
Infineon |
SOP-8 |
RFQ >>
|
|
BSP250 |
VBsemi |
- |
RFQ >>
|
|
BSP250+135 |
Nexperia |
- |
RFQ >>
|
|
BSP250,115 |
Nexperia USA Inc. |
MOSFET P-CH 30V 3A SOT223 |
RFQ >>
|
|
BSP250,135 |
Nexperia USA Inc. |
MOSFET P-CH 30V 3A SOT223 |
RFQ >>
|
|
BSP254 |
PHL |
SOT-223 |
RFQ >>
|
|
BSP254A |
NXP Semiconductors |
- |
RFQ >>
|
|
BSP254A,126 |
NXP USA Inc. |
MOSFET P-CH 250V 200MA TO92-3 |
RFQ >>
|
|
BSP255 |
UTG |
SOT-223 |
RFQ >>
|
|
BSP280 |
PHILIPS |
223 |
RFQ >>
|
|
BSP286 |
INFINEON |
SOT-223 |
RFQ >>
|
|
BSP295 |
Infineon |
- |
RFQ >>
|
|
BSP295E6327 |
Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223-4 |
RFQ >>
|
|
BSP295E6327T |
Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223-4 |
RFQ >>
|
|
BSP295H6327 |
Infineon |
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 |
RFQ >>
|
|
BSP295H6327XTSA1 |
Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223-4 |
RFQ >>
|
|
BSP295L6327 |
INFINEON |
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 |
RFQ >>
|
|
BSP295L6327HTSA1 |
Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223-4 |
RFQ >>
|
|
BSP296 |
VBsemi |
- |
RFQ >>
|
|
BSP296 E6433 |
Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT223-4 |
RFQ >>
|
|
BSP296E6327 |
Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT223-4 |
RFQ >>
|
|
BSP296L6327 |
Infineon |
Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 |
RFQ >>
|
|
BSP296L6327HTSA1 |
Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT223-4 |
RFQ >>
|
|
BSP296L6433 |
Infineon |
Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 |
RFQ >>
|
|
BSP296L6433HTMA1 |
Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT223-4 |
RFQ >>
|
|
BSP296N |
Infineon |
- |
RFQ >>
|
|
BSP296NH6327 |
Infineon |
Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 |
RFQ >>
|
|
BSP296NH6327XTSA1 |
Infineon Technologies |
MOSFET N-CH 100V 1.2A SOT223-4 |
RFQ >>
|
|
BSP296NH6433XTMA1 |
Infineon Technologies |
MOSFET N-CH 100V 1.2A SOT223-4 |
RFQ >>
|
|
BSP296NL6327HTSA1 |
Infineon Technologies |
MOSFET N-CH 100V 1.2A SOT223-4 |
RFQ >>
|
|
BSP297 |
Infineon |
- |
RFQ >>
|
|
BSP297 E6327 |
Infineon Technologies |
MOSFET N-CH 200V 660MA SOT223-4 |
RFQ >>
|
|
BSP297E6327 |
SIEMENS |
|
RFQ >>
|
|
BSP297H6327 |
INFINEON |
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOT-223, 4 PIN |
RFQ >>
|
|
BSP297H6327XTSA1 |
Infineon Technologies |
MOSFET N-CH 200V 660MA SOT223-4 |
RFQ >>
|
|
BSP297L6327 |
INFINEON |
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 |
RFQ >>
|