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BSP296NH6327

Part No BSP296NH6327
Manufacturer Infineon Technologies
Description Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Lead Free Status / RoHS Status Contains lead / RoHS compliant
Availability:22642 pcs
Quantity Unit Price Ext. Price
1+ $0.364 $36
10+ $0.3567 $178
100+ $0.3458 $346
1000+ $0.3349 $335
10000+ $0.3203 $320
The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Specifications

Data sheet

Continuous Drain Current (Id)1.2A
TypeNu6c9fu9053
Drain Source Voltage (Vdss)100V
Power Dissipation (Pd)1.8W
Gate Threshold Voltage (Vgs(th)@Id)1.8V@100u03bcA
Drain Source On Resistance (RDS(on)@Vgs,Id)600mu03a9@10V,1.2A

Introduce

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