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BSP296L6327

Part No BSP296L6327
Manufacturer Infineon Technologies
Description Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Lead Free Status / RoHS Status Lead Free / RoHS compliant
Availability:19413 pcs
Quantity Unit Price Ext. Price
1+ $170.12 $1,7012
10+ $166.7176 $8,3359
100+ $161.614 $16,1614
1000+ $156.5104 $15,6510
10000+ $149.7056 $14,9706
The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Specifications

Data sheet

Min Operating Temperature-55 °C
Threshold Voltage1.4 V
MountSurface Mount
Manufacturer Package IdentifierPG-SOT223-4
Fall Time7.9 ns
RoHSCompliant
Radiation HardeningNo
Drain to Source Voltage (Vdss)100 V
Drain to Source Resistance430 mΩ
Number of Channels1
Number of Pins3
Height1.8 mm
Number of Elements1
Input Capacitance364 pF
Lead FreeLead Free
Rds On Max700 mΩ
Max Power Dissipation1.79 W
Max Junction Temperature (Tj)150 °C
Drain to Source Breakdown Voltage100 V
Gate to Source Voltage (Vgs)20 V
REACH SVHCNo SVHC
Current Rating24 A
Turn-On Delay Time5.2 ns
Max Operating Temperature150 °C
Power Dissipation1.79 W
Continuous Drain Current (ID)1.1 A
Rise Time7.9 ns
Turn-Off Delay Time37.4 ns
Voltage Rating (DC)100 V
Case/PackageSOT-223-4

Introduce

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